| PART |
Description |
Maker |
| 1DI300MN-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 300A I(C)
Power Transistor Module
|
Fuji Electric
|
| MP4025 |
Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
| 6DI100A-050 |
POWER TRANSISTOR MODULE 100 A, 600 V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| KS8245A1 |
Single Darlington Transistor Module (15 Amperes/600 Volts) 15 A, 450 V, NPN, Si, POWER TRANSISTOR
|
Powerex, Inc.
Powerex Power Semiconductors
|
| MP4507 |
Power Transistor Module
|
Toshiba
|
| 2DI75M-050 |
POWER TRANSISTOR MODULE
|
Fuji Electric
|
| 1DI50MA-050 |
Power Transistor Module
|
Fuji
|
| 1DI300ZP-120 |
Power Transistor Module
|
Fuji Electric
|
| 2DI200D-100 |
POWER TRANSISTOR MODULE
|
FUJI[Fuji Electric]
|
